Semiconductor device having pocket and manufacture thereof

ABSTRACT

A semiconductor device has first and second active regions defined on the principal surface of a silicon substrate, a first n-channel MOS transistor formed in the first active region and having first extension regions and first pocket regions being deeper than the first extension regions and being doped with indium at a first concentration, and a second n-channel MOS transistor formed in the second active region and having second extension regions and second pocket regions being deeper than the second extension regions and being doped with indium at a second concentration lower than the first concentration. Boron ions may be implanted into the second pocket regions. The pocket regions can be formed by implanting indium ions and an increase in leak current to be caused by indium implantation can be reduced.

This application is based on and claims priority of Japanese patentapplication 2001-198594, filed on Jun. 29, 2001, the whole contents ofwhich are incorporated herein by reference.

BACKGROUND OF THE INVENTION

A) Field of the Invention

The present invention relates to a semiconductor device and itsmanufacture method, and more particularly to a semiconductor devicehaving pocket regions for suppressing the short channel effect and itsmanufacture method.

B) Description of the Related Art

With the advent of finer semiconductor devices, there arises a problemof the short channel effect relative to a threshold value of atransistor. As a countermeasure for this problem, a pocket structure hasbeen proposed. In an n-channel MOS transistor, p-type pocket regions areformed under the opposite ends of the gate. Boron (B) is widely used asimpurities for forming pocket regions. Indium (In) is also used recentlyas impurities for forming p-type pocket regions.

An n-channel MOS transistor using indium as the impurities for formingpocket regions has the following advantages:

a large suppression ability of the short channel effect; and

an improved drive capacity.

These advantages may be ascribed to a larger atomic weight (115) ofindium than that (11) of boron, which makes indium atoms difficult tosegregate and diffuse.

With reference to FIGS. 4A to 4D, a conventional method of manufacturinga semiconductor device having pocket regions will be described.

As shown in FIG. 4A, an isolation region 2 is formed in a principalsurface of a silicon substrate 1. In the structure shown in FIG. 4A, anisolation trench is formed in the silicon substrate 1 and filled withinsulating material such as silicon oxide. Unnecessary insulatingmaterial deposited on the surface of the silicon substrate 1 is removedby chemical mechanical polishing (CMP) or the like to form a shallowtrench isolation (STI) structure.

Instead of STI, local oxidation of silicon (LOCOS) may be used forforming an isolation region. The isolation region 2 defines a number ofactive regions. In the following description, an active region forforming an n-channel MOS transistor is used by way of example.

Boron ions are implanted into the active region of the silicon substrate1 at an acceleration energy of 300 keV and a dose of about 3.0×10¹³ cm⁻²to thereby form a p-type well 3. Next, boron ions are implanted at anacceleration energy of 30 keV and a dose of about 5.0×10¹² cm⁻² to forma channel region with an adjusted threshold value.

A gate insulating film 4 is formed on the surface of the active region,and a gate electrode layer of polysilicon, polycide or the like isformed on the gate insulating film 4. The gate electrode layer and gateinsulating film are patterned by using a resist mask to form aninsulated gate electrode 5 with the gate insulating film 4.

As shown in FIG. 4B, by using the insulated gate electrode as a mask,arsenic (As) ions are implanted at an acceleration energy of 5 keV and adose of about 3.0×10¹⁵ cm⁻² to form shallow extension regions 6.

As shown in FIG. 4C, pocket regions 7 are formed under the extensionregions 6. For example, indium ions are implanted at an accelerationenergy of 100 keV and a dose of about 6.3×10¹³ cm⁻² along fourdirections tilted by 30 degrees from the substrate normal to form indiumdoped regions 7.

As shown in FIG. 4D, an insulating layer of silicon oxide or the like isdeposited covering the insulated gate electrode 5. The insulating layeris anisotropically etched to leave only side wall spacers 8 on the sidewalls of the insulated gate electrode 5.

By using the insulated gate electrode and side wall spacers as a mask,n-type impurities are implanted to form deep source/drain regions 9. Forexample, phosphorous (P) ions are implanted at an acceleration energy of15 keV and a dose of about 5.0×10¹⁵ cm⁻². The deep source/drain regions9 are made for forming good contact with metal electrodes. If a silicidelayer is formed to lower the resistance of the source/drain regions,compound of metal and silicon is formed on the surfaces of thesource/drain regions 9.

The semiconductor substrate after the ion implantation processes isheated by lamp heating to activate the impurities. For example, the lampheating is performed at 1025° C. for about 3 seconds.

An n-channel MOS transistor having pocket regions containing indium hasthe advantages of suppressing the short channel effect and improving thedrive capacity. However, junction leak current increases. Leak currentof a narrow channel transistor also increases because of the inversenarrow channel effect.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a semiconductordevice having n-channel MOS transistors with pocket regions containingindium, the semiconductor device being able to suppress an increase inleak current to be caused by the use of indium.

It is another object of the invention to provide a method ofmanufacturing a semiconductor device having pocket regions formed byindium ion implantation, the method being able to suppress an increasein leak current to be caused by the use of indium.

According to one aspect of the present invention, there is provided asemiconductor device comprising: a silicon substrate having a principalsurface; first and second active regions defined by an isolation regionformed in a principal surface of said silicon substrate; a firstn-channel MOS transistor comprising a first insulated gate with a gateinsulating film formed in said first active region, first extensionregions formed in said first active region on both sides of the firstinsulated gate, and first pocket regions formed in said first activeregion on both sides of the first insulated gate at a deeper positionthan the first extension regions, the first pocket regions being dopedwith indium at a first concentration; and a second n-channel MOStransistor comprising a second insulated gate with a gate insulatingfilm formed in said second active region, second extension regionsformed in said second active region on both sides of the secondinsulated gate, and second pocket regions formed in said second activeregion on both sides of the second insulated gate at a deeper positionthan the second extension regions, the second pocket regions being dopedwith indium at a second concentration lower than the firstconcentration.

According to another aspect of the invention, there is provided asemiconductor device comprising: a silicon substrate having a principalsurface; first and second active regions defined by an isolation regionformed in a principal surface of said silicon substrate; a firstn-channel MOS transistor comprising a first insulated gate with a gateinsulating film formed in said first active region, first side wallspacers formed on both side walls of the first insulated gate, firstextension regions formed in said first active region on both sides ofthe first insulated gate, and first pocket regions formed in said firstactive region on both sides of the first insulated gate at a deeperposition than the first extension regions, the first pocket regionsbeing doped with indium at a first concentration, and said firstn-channel MOS transistor including regions of amorphous phase under thefirst side wall spacers; and a second n-channel MOS transistorcomprising a second insulated gate with a gate insulating film formed insaid second active region, second side wall spacers formed on both sidewalls of the second insulated gate, second extension regions formed insaid second active region on both sides of the second insulated gate,and second pocket regions formed in said second active region on bothsides of the second insulated gate at a deeper position than the secondextension regions, the second pocket regions being doped with indium ata second concentration lower than the first concentration, and saidsecond n-channel MOS transistor including smaller regions of amorphousphase under the second side wall spacers that the regions of amorphousphase under the first side wall spacers.

According to a further aspect of the present invention, there isprovided a method of manufacturing a semiconductor device comprising thesteps of: (a) forming an isolation region in a silicon substrate havinga principal surface to define first and second active regions; (b)forming a gate insulating film in the first and second active regions;(c) forming a conductive gate electrode layer on the gate insulatingfilm; (d) pattering the gate electrode layer and the gate insulatingfilm to form a first insulated gate on the first active region and asecond insulated gate on the second active region; (e) implanting n-typeimpurity ions into the first and second active regions to a first depthto form first and second extension regions on both sides of each of thefirst and second insulated gates;(f) masking the second active regionand implanting indium ions at a first dose into the first active regionto a second depth deeper than the first depth; and (g) masking the firstactive region and implanting indium ions at a second dose smaller thanthe first dose into the second active region to a third depth deeperthan the first depth.

An increase in leak current and generation of an amorphous phase can besuppressed by limiting the dose of indium for forming pocket regions.

Doping boron compensates for the insufficient effect of suppressing theshort channel effect.

As above, while the advantages of forming pocket regions by implantingindium ions are retained, an increase in leak current to be caused bythe use of indium can be suppressed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1E are cross sectional views illustrating manufactureprocesses for a semiconductor device having n-channel MOS transistorsaccording to an embodiment of the invention.

FIGS. 2A to 2D are cross sectional views illustrating manufactureprocesses for p-channel MOS transistors.

FIGS. 3A to 3D are cross sectional views illustrating manufactureprocesses for high breakdown voltage transistors and a plan view of asemiconductor chip.

FIGS. 4A to 4D are cross sectional view of a semiconductor chipillustrating a conventional method of manufacturing a semiconductordevice.

FIG. 5 is a graph showing thermal wave measurement results oftransistors having pocket regions containing indium.

FIG. 6 is a graph showing the leak current characteristics oftransistors having pocket regions containing indium and pocket regionscontaining a mixture of indium and boron.

FIGS. 7A to 7C are a schematic plan view of a transistor and graphsshowing dependencies of threshold values of standard transistors and lowleak transistors upon gate widths and lengths.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Prior to describing the embodiments of the invention, an n-channel MOStransistor having pocket regions containing indium will be described. Anincrease in junction leak current of an n-channel MOS transistor to becaused by the pocket region containing indium has been suggested ashaving a relation to residue of an amorphous phase.

Regions of amorphous phase formed during ion implantation are recoveredto the crystal phase by a thermal annealing process after ionimplantation. As transistors are made finer recently, thermal budget ofthe thermal annealing process is becoming lower. From this reason, theamorphous phase regions cannot sufficiently recover the crystal phase.It has been indicated that there are residue regions of amorphous phaseunder side wall spacers of a transistor which is implanted with indiumand has an increased junction leak current.

Activation factor of indium is lower than that of boron. There is atendency that the influence of a dose of indium used for transistorthreshold value adjustment becomes less than boron. In order to obtainthe same transistor threshold value, indium is required to be doped inamount more than boron. An increase in the dose will help formation ofamorphous phase.

Memory cells such as a static random access memory (SRAM) are made oftransistors having narrower gate widths than those of logic circuittransistors, in order to improve the integration degree.

Generally, as the gate width of a transistor becomes narrower, thethreshold voltage increases, which is called the narrow channel effect.In a semiconductor device utilizing shallow trench isolation, as thegate width becomes narrower, the threshold value becomes lower. Thephenomenon that the threshold voltage lowers with a decrease in a gatewidth is called the inverse narrow channel effect. In a device usingindium for forming p-type pocket regions, the inverse narrow channeleffect becomes more conspicuous than a device using boron. A loweredthreshold voltage is likely to involve an increase in leak current.

FIG. 5 is a graph showing experiment results of thermal wave measured bythe present inventors. Sample n-channel MOS transistors such as shown inFIG. 4D were formed having pocket regions 7 formed by implanting indiumions at various doses and by changing the conditions of the thermalannealing process after the ion implantation.

Thermal waves having a predetermined frequency were applied to thesesamples, and reflected thermal waves were measured to obtain thermalwave units (reflectivities) If there is an amorphous region in thesemiconductor substrate, this amorphous region presents a function ofincreasing reflections of thermal waves. Therefore, a high reflectivityof thermal waves suggests an increase in the amorphous region.

In FIG. 5, the abscissa represents dose of indium and the ordinaterepresents thermal wave unit (reflectivity). The dose of indium waschanged as 1.5×10¹³ cm⁻², 2.0×10¹³ cm⁻², 2.5×10¹³ cm⁻², 3.0×10¹³ cm⁻²,and 4.0×10 ¹³ cm⁻² and the four annealing conditions were used includingat 1025° C. for 3 seconds, at 1025° C. for 20 seconds, at 1100° C. for 3seconds, and at 900° C. for 20 seconds.

The measurement results of samples subjected to the annealing process at1025° C. for 3 seconds are indicated by a curve c1. The measurementresults of samples subjected to the annealing process at 1025° C. for 20seconds are indicated by a curve c2. As seen from the curve c1, as theindium dose exceeds 2.5×10¹³ cm⁻², the thermal wave unit graduallyrises. As the indium dose exceeds about 3.5×10¹³ cm⁻²,the thermal waveunit rises more than about 20% as compared to the generally flat waveunit in the low dose area.

As seen from the curve c2, as the time of the thermal annealing processat 1025° C. is prolonged from 3 seconds to 20 seconds, the thermal waveunit takes generally a flat value independently from the indium dose.

This may be ascribed to the state that the amorphous phase formed byindium implantation almost perfectly recovers a crystal phase. However,this thermal annealing condition influences finer devices more in otherpoints such as a junction shape.

The characteristics indicated by a curve d1 were obtained for thethermal annealing process at a lowered temperature of 900° C. for 20seconds. As seen from the curve d1, as the indium dose exceeds 2.0×10¹³cm⁻², a definite increase in the thermal wave unit appears. The thermalwave unit at the indium dose of 2.5×10¹³ cm⁻² increases by about 30% ascompared to the generally flat thermal wave unit in the low dose area.

The characteristics indicated by a curve d2 were obtained for thethermal annealing process at a raised temperature of 1100° C. for 3seconds. As seen from the curve d2, even the indium dose is increased, arise of the thermal wave unit is not recognized and generally the flatcharacteristics are obtained. However, this thermal annealing conditionat 1100° C. for 3 seconds influences finer devices more in other pointssuch as a junction shape.

It can be judged from the measurement results shown in FIG. 5 that theindium dose is preferably set to about 3.5×10¹³ cm⁻² or smaller for theheat treatment at 1025° C. for 3 seconds, from the viewpoint ofsuppressing the amorphous phase. It is preferable to set the indium doseto about 2.5×10¹³ cm⁻² or smaller for the heat treatment at 900° C. for20 seconds.

Next, embodiments of the invention will be described. FIGS. 1A to 1E arecross sectional views of a semiconductor chip illustrating mainprocesses of a method of manufacturing standard transistors permitted toincrease leak current and low leak current transistors with pocketregions containing indium, respectively formed on a single semiconductorchip. Description will first be made mainly on the manufacture ofn-channel transistors.

As shown in FIG. 1A, an isolation region 2 is formed by STI in theprincipal surface of a silicon substrate 1. The isolation region 2defines a number of active regions AR on the principal surface of thesilicon substrate 1.

A p-channel area is covered with a mask such as resist, and B⁺ ions areimplanted into an n-channel area at an acceleration energy of 300 keVand a dose of 3.0×10¹³ cm⁻² to form a p-type well 3. B⁺ ions are furtherimplanted into a surface layer of the substrate at an accelerationenergy of 30 keV and a dose of 5.0×10¹² cm⁻² to form a channel with anadjusted threshold value.

The n-channel region is covered with a mask such as resist to performanother ion implantation for the p-channel area.

A thin gate insulating film 4 is formed on the active regions, and aconductive gate electrode layer of polysilicon, polycide or the like isformed on the gate insulating film 4. For example, the gate insulatingfilm 4 is made of a silicon oxide film having a thickness of about 5 to10 nm and formed by thermal oxidation or the like. A resist mask PR isformed on the gate electrode layer, and the gate electrode layer andgate insulating film are patterned to form an insulated gate electrode 5and a gate insulating film 4. Thereafter, the resist mask PR is removed.

As shown in FIG. 1B, by using the insulated gate electrode 5 and STIregion 2 as a mask, As ions are implanted into the active region in then-channel area at an acceleration energy of 5 keV and a dose of about3.0×10¹⁵ cm⁻² to form shallow source/drain extension regions 6.

During this ion implantation, the p-channel area is covered with aresist mask. Another ion implantation is performed for forming p-typeextension regions of the p-channel area by covering the n-channel areawith a mask such as resist.

The above processes are used in common for both standard transistors andlow leak current transistors.

In FIG. 1C, a standard transistor is shown on the left side and a lowleak current transistor is shown in the right side. As shown in FIG. 1C,the active region of a low leak current transistor is covered with aresist mask PR1, and In⁺ ions are implanted into the active region of ann-channel standard transistor at an acceleration energy of 100 keV and atotal dose of about 6.3×10¹³ cm⁻² to form pocket regions 7 under theshallow extension regions. The resist mask PR1 is thereafter removed.

The ion implantation is performed along four directions tilted by about30 degrees from the substrate normal. By tilting the ion implantationdirection, the p-channel pocket regions extending or penetrating underthe opposite end regions of the insulated gate can be formed.

As shown in FIG. 1D, the standard transistor area is covered with aresist mask PR2, and ions are implanted into the active region of ann-channel low leak current transistor to form pocket regions. First, In⁺ions are implanted at an acceleration energy of 100 keV and a total dose(of four implantations) of about 3.4×10¹³ cm⁻². Then, B⁺ ions areimplanted at an acceleration energy of 10 keV and a total dose of about2.0×10¹³ cm⁻². This ion implantation is also performed along fourdirections tilted by 30 degrees from the substrate normal.

In the above manner, for the pocket regions of a low leak currentn-channel MOS transistor, the In ion dose is limited to suppress thegeneration of an amorphous phase. The insufficient effect of suppressingthe short channel effect is compensated by further implanting B ions.Thereafter, the resist mask PR2 is removed. The processes described withFIGS. 1C and 1D are used for the n-channel MOS transistor. Other ionimplantation processes are performed for the pocket regions of thep-channel MOS transistor.

As shown in FIG. 1E, an insulating layer such as a silicon oxide layeris deposited covering the insulated gate electrode 5, and anisotropicetching is performed to leave only side wall spacers 8 on the side wallsof the insulated gate electrode.

By using the insulated gate electrode 5 and side wall spacers 8 as amask, n-type impurities, e.g., P⁺ ions, are implanted at an accelerationenergy of 15 keV and a dose of about 5.0×10¹⁵ cm⁻² to form deepsource/drain regions 9. Since the deep source/drain regions 9 are formedoutside the side wall spacers, the extension regions 6 and pocketregions 7 are left under the side wall spacers.

FIGS. 2A to 2C are cross sectional views illustrating manufactureprocesses for a p-channel MOS transistor in a p-channel area. It will beapparent to those skilled in the art that some processes can beperformed commonly for the n-channel and p-channel transistors.

As shown in FIG. 2A, an isolation region 2 is formed by STI describedearlier in the principal surface of a silicon substrate 1. Into thep-channel active region, n-type impurities, e.g., P⁺ ions, are implantedat an acceleration energy of 600 keV and a dose of about 3.0×10¹³ cm⁻²to form an n-type well 13. Further, P⁺ ions are implanted at anacceleration energy of 80 keV and a dose of about 2.0×10¹² cm⁻² to forma channel with an adjusted threshold value.

A gate insulating film 4 of silicon oxide or the like is formed on theactive region, and a gate electrode layer of polysilicon, silicide orthe like is formed on the gate insulating film 4. The gate electrodelayer and gate insulating film 4 are patterned to form an insulated gateelectrode 15 with the gate insulating film 4. The polysilicon gateelectrode 15 is doped with impurities to have a p-type conductivity.

As shown in FIG. 2B, by using the gate electrode 15 and isolation region2 as a mask, B⁺ ions are implanted, for example, at an accelerationenergy of 1 keV and a dose of about 3.0×10¹⁴ cm⁻² to form shallowsource/drain extension regions 16.

As shown in FIG. 2C, As⁺ ions are implanted at an acceleration energy of80 keV and a dose of about 3.0×10¹³ cm⁻² to form n-type pocket regions17 under the source/drain extension regions. This ion implantation isperformed along four directions tilted by 30 degrees from the substratenormal.

As shown in FIG. 2D, side wall spacers 8 are formed on the side walls ofthe insulated gate electrode 15 by the processes described earlier.

Thereafter, B⁺ ions are implanted at an acceleration energy of 5 keV anda dose of about 5.0×10¹⁵ cm⁻² to form deep source/drain regions 19.

The pocket region containing As does not pose a problem of thegeneration of leak current and the like as in the case of the pocketregion containing In. It is therefore unnecessary to separately formstandard transistors and low leak current transistors.

FIGS. 3A to 3C illustrate manufacture processes for high breakdownvoltage transistors of an input/output circuit or the like.

As shown in FIG. 3A, by using the processes similar to those of theabove-described embodiments, an isolation region 2 is formed. In thefollowing, manufacture processes for an n-channel MOS transistor aredescribed by way of example.

B⁺ ions are implanted at an acceleration energy of 300 keV and a dose ofabout 3.0×10¹³ cm⁻² to form a p-type well 23. Further, B⁺ ions areimplanted at an acceleration energy of 30 keV and a dose of about7.0×10¹² cm⁻² to form a channel region.

A thick gate insulating film 14, compared to that of the standard andlow leak transistors, is formed on the active region, and a gateelectrode layer is formed on the gate insulating film 14. The thicknessof the gate insulating film is controlled so that a desired breakdownvoltage can be obtained. For example, the oxidation process for thesurface of the active region is performed at two stages. During theintermediate stage between the two stages, an oxide film is removedwhich was formed in an area other than the area where a thick gateinsulating film is to be formed. In this manner, a thick gate insulatingfilm and a thin gate insulating film are formed.

The gate electrode layer and gate insulating film are patterned by usinga resist mask to form a gate electrode 25 and a gate insulating film 14.

As shown in FIG. 3B, As⁺ ions are implanted at an acceleration energy of10 keV and a dose of about 3.0×10¹⁴ cm⁻² to form source/drain extensionregions 6.

As shown in FIG. 3C, after side wall spacers 8 are formed on the sidewalls of the gate electrode 25 by the processes similar to those of theembodiments described earlier, P⁺ ions are implanted, for example, at anacceleration energy of 15 keV and a dose of about 5×10¹⁵ cm⁻² to formdeep source/drain regions 29.

The high breakdown transistor is not made too fine and pocket regionsare not formed. It is noted that some processes are performed in commonfor different types of transistors.

FIG. 3D is a plan view showing the outline of the layout of asemiconductor chip formed by the processes described above. Asemiconductor chip 30 has an input/output circuit 31, a memory circuit32 and a logic circuit 33. The input/output circuit 31 has highbreakdown voltage transistors such as shown in FIG. 3C. The memorycircuit 32 is made of, for example, static random access memories (SRAM)formed by low leak current n-channel transistors. The logic circuit 33is constituted of a CMOS circuit formed of n-channel standardtransistors having a gate width wider than that of a low leak currenttransistor of a memory cell and p-channel transistors having pocketregions.

FIG. 6 is a graph showing leak current characteristics of standardtransistors and low leak current transistors formed by theabove-described embodiment methods. In FIG. 6, the abscissa representsleak current in the unit of ampere A and the ordinate represents acumulative probability. A curve r shows the characteristics of low leakcurrent transistors whose pocket regions contain indium ions implantedat 3.4×10¹³ cm⁻² and boron ions implanted at 2.0 ×10¹³ cm⁻². A curve sshows the characteristics of standard transistors whose pocket regionscontain indium ions implanted at 6.28×10¹³ cm⁻¹.

As apparent from FIG. 6, there is a large difference between leakcurrents by one digit or larger. It is apparent that leak current lowersgreatly by limiting the dose of indium ions. This may be ascribed tothat as the indium dose is reduced, the degree of amorphism issuppressed so that the amorphous phase region can sufficiently recoverthe crystal phase by an annealing process. An increase in leak currentmay be ascribed to that as the indium dose is increased to a certainvalue or higher, the amorphous region unable to recover the crystalregion increases.

FIGS. 7A to 7C are a schematic plan view of a transistor and graphsshowing dependencies of threshold voltages upon gate widths and lengths.

As shown in FIG. 7A, the gate electrode G formed above an active regionAR has a gate length L which is the width of the gate electrode (lengthalong a current direction) and a gate width W which is the width of theactive region along the direction perpendicular to the currentdirection.

FIG. 7B is a graph showing the dependency of a transistor thresholdvoltage upon a gate length. In FIG. 7B, the abscissa represents the gatelength L in the unit of μm and the ordinate represents the transistorthreshold voltage Vth in the unit of volt V. This graph shows thecharacteristics of standard transistors whose pocket regions containonly In and the characteristics of low leak current transistors whosepocket regions contain two types of impurities, i.e. In and B. Thethreshold voltages of these two types of transistors are generallyequal. This means that the low leak current transistor maintains thecharacteristics of suppressing the short channel effect similar to thecharacteristics of the standard transistor.

FIG. 7C is a graph showing the dependency of a transistor thresholdvoltage upon a gate width. In FIG. 7C, the abscissa represents the gatewidth W in the unit of μm and the ordinate represents the transistorthreshold voltage Vth in the unit of volt V. The threshold voltage Vs ofthe standard transistor lowers as the gate width W is narrowed, andeventually reaches near 0. In contrast, the threshold voltage Us of thelow leak current transistor whose pocket regions contain both In and Bhas a finite value even if the gate width W is narrowed (narrowchannel). The low leak current transistor can be obtained whichsuppresses the influence of the inverse narrow channel effect.

A memory circuit such as SRAM is made of low leak current transistorshaving a narrow gate width, e.g., 0.05 to 0.5 μm in order to improve theintegration degree. A logic circuit is made of standard transistorshaving a wider gate width, e.g., 1 to 10 μm.

If B is used as p-type impurities, instead of atomic boron, boroncompound such as BF₂ and decaborane may also be used as ion sources. Inthe above description, although a logic circuit is made of standardtransistors, it may be made of a combination of standard transistors andlow leak current transistors or made of only low leak currenttransistors. A notch gate may be used as a gate.

The present invention has been described in connection with thepreferred embodiments. The invention is not limited only to the aboveembodiments. It will be apparent to those skilled in the art thatvarious modifications, improvements, combinations, and the like can bemade.

What is claimed is:
 1. A method of manufacturing a semiconductor devicecomprising the steps of: (a) forming an isolation region in a siliconsubstrate having a principal surface to define first and second activeregions; (b) forming a gate insulating film in the first and secondactive regions; (c) forming a conductive gate electrode layer on thegate insulating film; (d) pattering the gate electrode layer and thegate insulating film to form a first insulated gate on the first activeregion and a second insulated gate on the second active region; (e)implanting n-type impurity ions into the first and second active regionsto a first depth to form first and second extension regions on bothsides of each of the first and second insulated gates; (f) masking thesecond active region and implanting indium ions at a first dose into thefirst active region to a second depth deeper than the first depth; and(g) masking the first active region and implanting indium ions at asecond dose smaller than the first dose into the second active region toa third depth deeper than the first depth.
 2. The method ofmanufacturing a semiconductor device according to claim 1, furthercomprising the step of: (h) masking the first active region andimplanting boron ions into the second active region to a fourth depthdeeper than the first depth.
 3. The method of manufacturing asemiconductor device according to claim 2, further comprising the stepsof: (i) forming side wall spacers on side walls of each of the first andsecond insulated gates; (j) implanting n-type impurity ions into thefirst and second active regions outside the side wall spacers; and (k)radiating light to the first and second active regions to activate theimpurity ions.
 4. The method of manufacturing a semiconductor deviceaccording to claim 2, wherein said step (a) further defines a fourthactive region, and the method further comprises the steps of: (m)forming a fourth insulated gate in the fourth active region; (n)implanting p-type impurity ions into the fourth active region to a fifthdepth to form fourth extension regions on both sides of the fourthinsulated gate; and (o) implanting arsenic ions into the fourth activeregion to a sixth depth deeper than the fifth depth.
 5. The method ofmanufacturing a semiconductor device according to claim 1, furthercomprising the steps of: (i) forming side wall spacers on side walls ofeach of the first and second insulated gates; (j) implanting n-typeimpurity ions into the first and second active regions outside the sidewall spacers; and (k) radiating light to the first and second activeregions to activate the impurity ions.
 6. The method of manufacturing asemiconductor device according to claim 1, wherein said step (a) furtherdefines a third active region, and the method further comprises the stepof: (l) forming a thick gate insulating film thicker than the gateinsulating film in the third active region, said steps (c) and (d) forma third insulated gate in the third active region, and said steps (f)and (g) are executed by masking the third active region.
 7. The methodof manufacturing a semiconductor device according to claim 6, whereinsaid step (a) further defines a fourth active region, the method furthercomprises the steps of: (m) forming a fourth insulated gate in thefourth active region; (n) implanting p-type impurity ions into thefourth active region to a fifth depth to form fourth extension regionson both sides of the fourth insulated gate; and (o) implanting arsenicions into the fourth active region to a sixth depth deeper than thefifth depth.
 8. The method of manufacturing a semiconductor deviceaccording to claim 1, wherein said step (a) further defines a fourthactive region, and the method further comprises the steps of: (m)forming a fourth insulated gate in the fourth active region; (n)implanting p-type impurity ions into the fourth active region to a fifthdepth to form fourth extension regions on both sides of the fourthinsulated gate; and (o) implanting arsenic ions into the fourth activeregion to a sixth depth deeper than the fifth depth.